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US Patent Issued to Allegro MicroSystems on June 23 for "Method to implant p-type and/or n-type rings in a semiconductor device" (American, Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,643, issued on June 23, was assigned to Allegro MicroSystems LLC (Manchester, N.H.). "Method to implant p-type and/or n-type rings in a sem... Read More


US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on June 23 for "Semiconductor structure facilitating prevention of a parasitic device and method for forming same" (Chinese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,644, issued on June 23, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturin... Read More


US Patent Issued to LG DISPLAY on June 23 for "Thin film transistor substrate and display apparatus comprising the same" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,645, issued on June 23, was assigned to LG DISPLAY Co. LTD. (Seoul, South Korea). "Thin film transistor substrate and display apparatus com... Read More


US Patent Issued to SAMSUNG ELECTRONICS, RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY on June 23 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,646, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea) and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Transistor including bottom isolation and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,647, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Transistor including bottom isolati... Read More


US Patent Issued to International Business Machines on June 23 for "Enabling anneal for reliability improvement and multi-VT with interfacial layer regrowth suppression" (New York Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,648, issued on June 23, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Enabling anneal for reliability improvement ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device including gate structure and multiple integrated separation structures" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,649, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including gate structur... Read More


US Patent Issued to QUALCOMM on June 23 for "Field-effect transistors (FETs) employing thermal expansion of work function metal layers for strain effect and related fabrication methods" (California Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,650, issued on June 23, was assigned to QUALCOMM Inc. (San Diego). "Field-effect transistors (FETs) employing thermal expansion of work fun... Read More


US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device having a separation structure" (South Korean Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,651, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device having a separation str... Read More


US Patent Issued on June 23 for "Local backside contact isolation for merged backside contact patterning" (New York Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,652, issued on June 23. "Local backside contact isolation for merged backside contact patterning" was invented by Gideon Oyibo (Rensselaer,... Read More